The effect of structure parameters and static electric field on the nonlinear optical properties of triple InGaAs/GaAs quantum well

Abstract

Optical properties of In x Ga 1-x As/GaAs triple QW are studied for different quantum well thicknesses and external electric fields. The effective mass approximation is used to calculate the band alignment of the structure. The finite difference method (FDM) is applied to solve the 1D- Schrödinger equation. Inter- subband energies and the total optical absorption coefficients (TOACs) and total relative refractive index changes (RRICs) are numerically calculated under the applied external electric field. The structure pa- rameters and applied electric field cause the separation of the energy levels and variation of the dipole moment matrix elements. These separations are responsible for the resonant peak shifts. It is shown that the varied structure parameters and external electric field cause red or blue shifts in the resonant peak position of TOAC and RRIC coefficients.