| dc.description.abstract | In this study, the nonlinear optical properties of the In𝑥���Ga1−𝑥���As/GaAs Mathieu quantum dot (MQD) are
investigated for the first time, focusing on the nonlinear optical rectification (NOR), second harmonic
generation (SHG), and third harmonic generation (THG). The effects of external fields such as the electric
field, magnetic field, and laser radiation field on the nonlinear optical properties of MQD are examined, along
with structural parameters such as quantum dot depth and width determined by the indium concentration. The
motivation of the study is to explain the NOR, SHG, and THG characteristics of MQD in response to changes
in external fields and structural factors. To investigate the effects of the laser field, the time-dependent part of
the laser field is transferred to the potential energy term of the wave equation using the Kramers–Henneberger
(KH) and dipole approximations, creating a laser-dressed potential. Then, the effective potential wave equation
is solved using the tridiagonal matrix method. The effects of external fields and structural parameters of MQD
on the NOR, SHG, and THG coefficients are discussed in detail. The optimality of the structure for device
design and applications considering MQD is revealed, and alternative parameter analysis is conducted for this
optimality | tr |
