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Shallow donor impurities in different shaped double quantum wells under the hydrostatic pressure and applied electric field
(ELSEVIER SCIENCE BV, 2005)
The combined electric field and hydrostatic pressure effects on the binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW) and double square (DSQW) GaAs-(Ga,Al)As quantum wells ...
Effect of applied external fields on the nonlinear optical properties of a Woods-Saxon potential quantum well
(ELSEVIER SCIENCE BV, 2019)
In this present work a detailed theoretical study on the influence of the static electric, magnetic, and nonresonant intense THz laser fields on the nonlinear optical properties such as nonlinear optical rectification (NOR) ...
Photoionization of donor impurities in quantum wires in a magnetic field
(IOP PUBLISHING LTD, 2004)
Using a variational approach, we have calculated the impurity position dependence of the photoionization cross-section and the binding energy of a hydrogenic donor impurity in a quantum well wire in the presence of the ...
The triple Si delta-doped GaAs structure
(SPRINGER, 2005)
For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si delta-doped GaAs, at T = 0 K. To ...
Optical transitions in quantum well wires under intense laser radiation
(ELSEVIER SCIENCE BV, 2003)
The influence of a laser-field on the exciton binding energy and interband optical transitions in quantum-well wires is calculated by using a variational method and in the effective mass approximation. We conclude that in ...
Double quantum well electronic energy spectrum within a tilted magnetic field
(ACADEMIC PRESS LTD, 1999)
The analytical solutions of the Schrodinger equation for a double quantum well structure (DQWS) subjected to an externally applied tilted magnetic field are obtained and the results are discussed. The dependency of the ...
Electronic properties of Si delta-doped GaAs under an applied electric field
(IOP PUBLISHING LTD, 2001)
We have theoretically investigated the electronic structure of Si delta -doped GaAs inserted into a quantum well under an applied electric field. For uniform distribution we have studied the influence of the electric field ...
Effect of crossed electric and magnetic fields on donor impurity binding energy
(SPRINGER-VERLAG, 2004)
By using an appropriate coordinate transformation, we have calculated variationally the ground state binding energy of a hydrogenic donor impurity in a quantum well in the presence of crossed electric and magnetic fields ...
Barrier thickness dependence of optical absorption of excitons in GaAs coupled quantum wire
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)
We have calculated the binding energy of excitons, and the interband optical absorption in rectangular coupled quantum-well wires of GaAs surrounded by Ga1-chiAlchiAs in effective-mass approximation, using the variational ...
Si delta-doped GaAs structure with different dopant distribution models
(AMER INST PHYSICS, 2002)
We have theoretically investigated the diffusion of donor impurities of single Si delta-doped GaAs inserted into a quantum well at T=0 K. The spread of the impurities is taken into account in three different models: (i) a ...