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Now showing items 11-20 of 20
Electronic energy spectra in a multiple quantum well within external electric and tilted magnetic fields
(IOP PUBLISHING LTD, 2000)
The analytical solution of the Schrodinger equation for a multiple-quantum-well system subjected to an externally applied electric field in the growth direction and an externally applied tilted magnetic field are obtained ...
Binding energy of excitons in symmetric and asymmetric coupled double quantum wells in a uniform magnetic field
(IOP PUBLISHING LTD, 2000)
The binding energy of excitons in symmetric and asymmetric coupled double GaAs/Ga1-xAlxAs quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic ...
Electric field dependence of the excitonic properties in graded double quantum wells
(IOP PUBLISHING LTD, 1999)
A quasi-bound state approximation is used to obtain the electric field dependence of the eigenvalues, eigenfunctions, electron-hole overlap integrals and excitonic binding energies for coupled, graded double quantum wells ...
Electronic properties of two coupled Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have theoretically investigated the subband structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The ...
Influence of an applied electric field on the electronic properties of Si delta-doped GaAs
(E D P SCIENCES, 2003)
We have theoretically studied the electronic structure of Si delta-doped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence ...
The orbit centre dependence of the energy levels in a single quantum well under external titled magnetic and electric fields
(IOP PUBLISHING LTD, 1997)
The: analytical solutions of the Schrodinger equation for a square well system subjected to an externally applied electric field in the growth direction and an externally applied tilted magnetic field are obtained and the ...
Binding energies of excitons in symmetric and asymmetric quantum wells in a magnetic field
(ACADEMIC PRESS LTD, 1998)
The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga1-xAlxAs quantum wells is calculated with the use of a variational approach. Results have been obtained as a function of the potential symmetry, and ...
An alternative method for the exact calculation of Wannier-Stark localization in superlattices
(ACADEMIC PRESS LTD, 2001)
We present an alternative method for the exact calculations of the Wannier-Stark (WS) localization in a long periodic potential corresponding to a (50 Angstrom /30 Angstrom) GaAs/Ga0.7Al0.3As superlattice. We show that the ...
Influence of temperature on the electronic properties of Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have investigated theoretically the electronic structure of Si delta-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and ...
Subband structure and excitonic binding of graded GaAs/Ga1-xAlxAs quantum wells under an electric field
(ACADEMIC PRESS LTD, 1998)
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAlAs quantum well are calculated variationally within the effective mass approximation. The very sensitive dependence of ...