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OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al-0.3 Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2012)
The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1-2) transition and the binding energy of the shallow-donor impurities in a Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As quantum well ...
Photoionization cross-section and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wires
(PERGAMON-ELSEVIER SCIENCE LTD, 2011)
We have investigated the effects of the nitrogen and indium concentrations on the photoionization crosssection and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wires. The numerical calculations ...
Effects of applied electromagnetic fields on the linear and nonlinear optical properties in an inverse parabolic quantum well
(ELSEVIER SCIENCE BV, 2012)
In this present work, we have investigated theoretically the effects of applied electric and magnetic fields on the linear and nonlinear optical properties in a GaAs/AlxGa1-xAs inverse parabolic quantum well for different ...
Combined effects of intense laser field, electric and magnetic fields on the nonlinear optical properties of the step-like quantum well
(ELSEVIER SCIENCE SA, 2015)
In the present work, the effects of the intense laser field on total optical absorption coefficient (the linear and third-order nonlinear) and total refractive index change for transition between two lower-lying electronic ...
Effects of applied electric and magnetic fields on the nonlinear optical properties of asymmetric GaAs/Ga1-xAlxAs double inverse parabolic quantum well
(ELSEVIER SCIENCE BV, 2015)
The combined effects of electric and magnetic fields on the optical absorption coefficients and refractive index changes related to the intersubband transitions within the conduction band of asymmetric GaAs/Ga1-xAlxAs ...
Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells
(ELSEVIER SCIENCE BV, 2010)
Within the framework of effective-mass approximation, using a variational method, the effect of high-frequency laser field on intersubband transitions and the binding energy of shallow-donor impurities in a semiconductor ...
Optical response in a laser-driven quantum pseudodot system
(ELSEVIER SCIENCE BV, 2017)
We investigate theoretically the intense laser-induced optical absorption coefficients and refractive index changes in a two-dimensional quantum pseudodot system under an uniform magnetic field. The effects of non-resonant, ...
Combined effects of the intense laser field, electric and magnetic fields on the optical properties of n-type double delta-doped GaAs quantum well
(ELSEVIER SCIENCE BV, 2017)
In the present work, the effects of the non-resonant intense laser field, electric and magnetic fields on the optical properties, such as linear, third order nonlinear and the total optical absorption coefficient and ...
The effects of the electric and magnetic fields on the nonlinear optical properties in the step-like asymmetric quantum well
(ELSEVIER SCIENCE BV, 2014)
In the present work, total optical absorption coefficient (the linear and third-order nonlinear) and total refractive index change for transition between two first lower-lying electronic levels in the step-like GaAs/Ga1-xAlxAs ...
Hydrogenic impurities in quantum dots under intense high-frequency laser field
(ELSEVIER SCIENCE BV, 2011)
The effects of intense high-frequency laser field on photoionization cross-section and binding energy of shallow-donor impurities in GaAs/GaAlAs quantum dots are calculated using variational method with the effective-mass ...