Photoionization cross-section and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wires
Abstract
We have investigated the effects of the nitrogen and indium concentrations on the photoionization crosssection and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wires. The numerical calculations are performed in the effective mass approximation, using a variational method. We observe that incorporation of small amounts of nitrogen and indium leads to significant changes of the photoionization cross-section and binding energy. (C) 2011 Elsevier Ltd. All rights reserved.
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SOLID STATE COMMUNICATIONSVolume
151Issue
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