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dc.contributor.authorYesilgul, U.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorSari, H.
dc.contributor.authorSokmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:05:15Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:05:15Z
dc.date.issued2011
dc.identifier.issn0038-1098
dc.identifier.urihttps://dx.doi.org/10.1016/j.ssc.2011.04.029
dc.identifier.urihttps://hdl.handle.net/20.500.12418/9482
dc.descriptionWOS: 000293940400017en_US
dc.description.abstractWe have investigated the effects of the nitrogen and indium concentrations on the photoionization crosssection and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wires. The numerical calculations are performed in the effective mass approximation, using a variational method. We observe that incorporation of small amounts of nitrogen and indium leads to significant changes of the photoionization cross-section and binding energy. (C) 2011 Elsevier Ltd. All rights reserved.en_US
dc.language.isoengen_US
dc.publisherPERGAMON-ELSEVIER SCIENCE LTDen_US
dc.relation.isversionof10.1016/j.ssc.2011.04.029en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectQuantum-well wiresen_US
dc.subjectImpurityen_US
dc.subjectPhotoionizationen_US
dc.titlePhotoionization cross-section and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wiresen_US
dc.typearticleen_US
dc.relation.journalSOLID STATE COMMUNICATIONSen_US
dc.contributor.department[Yesilgul, U. -- Kasapoglu, E. -- Sari, H.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Sokmen, I.] Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkeyen_US
dc.identifier.volume151en_US
dc.identifier.issue17en_US
dc.identifier.endpage1178en_US
dc.identifier.startpage1175en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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