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Now showing items 11-17 of 17
Electronic energy spectra in a multiple quantum well within external electric and tilted magnetic fields
(IOP PUBLISHING LTD, 2000)
The analytical solution of the Schrodinger equation for a multiple-quantum-well system subjected to an externally applied electric field in the growth direction and an externally applied tilted magnetic field are obtained ...
Binding energy of excitons in symmetric and asymmetric coupled double quantum wells in a uniform magnetic field
(IOP PUBLISHING LTD, 2000)
The binding energy of excitons in symmetric and asymmetric coupled double GaAs/Ga1-xAlxAs quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic ...
Electronic properties of two coupled Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have theoretically investigated the subband structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The ...
Influence of an applied electric field on the electronic properties of Si delta-doped GaAs
(E D P SCIENCES, 2003)
We have theoretically studied the electronic structure of Si delta-doped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence ...
A new approach to quantum well infrared photodetectors: Staircase-like quantum well and barriers
(ELSEVIER SCIENCE BV, 2006)
We present a theoretical investigation of a novel staircase-like quantum well infrared photodetector (QWIP). The proposed structure makes use of quantum wells and barriers with increasing Al content both in the wells and ...
An alternative method for the exact calculation of Wannier-Stark localization in superlattices
(ACADEMIC PRESS LTD, 2001)
We present an alternative method for the exact calculations of the Wannier-Stark (WS) localization in a long periodic potential corresponding to a (50 Angstrom /30 Angstrom) GaAs/Ga0.7Al0.3As superlattice. We show that the ...
Influence of temperature on the electronic properties of Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have investigated theoretically the electronic structure of Si delta-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and ...