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Now showing items 21-30 of 65
Intersubband electron transition across a staircase potential containing quantum wells: light emission
(ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD, 2005)
We present a theoretical investigation of a novel staircase-like light emitter based on the GaAs/GaxAl1-xAs material system. The emission wavelength is around 12 mum. The device operation is based on the intersubband ...
Intersubband transitions for single, double and triple Si delta-doped GaAs layers
(IOP PUBLISHING LTD, 2003)
The intersubband transitions in single, double and triple Si delta-doped GaAs structures are theoretically studied for different applied electric fields. Electronic properties such as the confining potential, the subband ...
Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness
(SPRINGER-VERLAG, 2003)
For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si delta-doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger ...
Tilted magnetic field effect on the subbands of a GaAlAs diode with a GaAs quantum well
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2003)
We have calculated the subbands in the GaAs quantum well at the n-side of the junction in a Ga1-xAlxAs diode. We show that the density of carriers confined in the quantum well increases by the increasing magnetic field ...
Subband structure and band bending in symmetric modulation-doped double quantum wells
(EDP SCIENCES S A, 2005)
We have calculated the subband structure and confinement potential of modulation-doped Ga1-xAlxAs-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are ...
The effect of the donor distribution on the electronic structure of two coupled Si delta-doped layers in GaAs
(ELSEVIER SCIENCE BV, 2003)
We have theoretically investigated the electronic structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform donor distribution we have studied the influence of donor concentration on the subband structure. ...
Shallow donor impurity binding energy in the V-shaped quantum well under the crossed electric and magnetic fields
(ELSEVIER SCIENCE BV, 2005)
We have calculated variationally the ground state binding energy of a hydrogenic donor impurity in V-shaped quantum well (VQW) or full-graded GaAs/Ga1-xAlxAs quantum wells in the presence of crossed electric and magnetic ...
The effect of hydrostatic pressure on optical transitions in quantum-well wires
(ELSEVIER SCIENCE BV, 2004)
Using a variational approach, we have investigated mainly, the effect of the hydrostatic pressure, and the wire dimension on the interband optical absorption and the exciton binding energy in a quantum-well wire. We have ...
Electronic energy spectra in a multiple quantum well within external electric and tilted magnetic fields
(IOP PUBLISHING LTD, 2000)
The analytical solution of the Schrodinger equation for a multiple-quantum-well system subjected to an externally applied electric field in the growth direction and an externally applied tilted magnetic field are obtained ...
The electric field effects on intersubband optical absorption of Si delta-doped GaAs layer
(PERGAMON-ELSEVIER SCIENCE LTD, 2003)
The intersubband transitions in Si delta-doped GaAs structures is theoretically investigated for different applied electric fields. For an uniform distribution the electronic structure has been calculated by solving the ...