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Now showing items 21-30 of 67
Intersubband electron transition across a staircase potential containing quantum wells: light emission
(ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD, 2005)
We present a theoretical investigation of a novel staircase-like light emitter based on the GaAs/GaxAl1-xAs material system. The emission wavelength is around 12 mum. The device operation is based on the intersubband ...
Intersubband transitions for single, double and triple Si delta-doped GaAs layers
(IOP PUBLISHING LTD, 2003)
The intersubband transitions in single, double and triple Si delta-doped GaAs structures are theoretically studied for different applied electric fields. Electronic properties such as the confining potential, the subband ...
Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness
(SPRINGER-VERLAG, 2003)
For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si delta-doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger ...
Tilted magnetic field effect on the subbands of a GaAlAs diode with a GaAs quantum well
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2003)
We have calculated the subbands in the GaAs quantum well at the n-side of the junction in a Ga1-xAlxAs diode. We show that the density of carriers confined in the quantum well increases by the increasing magnetic field ...
Subband structure and band bending in symmetric modulation-doped double quantum wells
(EDP SCIENCES S A, 2005)
We have calculated the subband structure and confinement potential of modulation-doped Ga1-xAlxAs-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are ...
The effect of the donor distribution on the electronic structure of two coupled Si delta-doped layers in GaAs
(ELSEVIER SCIENCE BV, 2003)
We have theoretically investigated the electronic structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform donor distribution we have studied the influence of donor concentration on the subband structure. ...
Shallow donor impurity binding energy in the V-shaped quantum well under the crossed electric and magnetic fields
(ELSEVIER SCIENCE BV, 2005)
We have calculated variationally the ground state binding energy of a hydrogenic donor impurity in V-shaped quantum well (VQW) or full-graded GaAs/Ga1-xAlxAs quantum wells in the presence of crossed electric and magnetic ...
The effect of hydrostatic pressure on optical transitions in quantum-well wires
(ELSEVIER SCIENCE BV, 2004)
Using a variational approach, we have investigated mainly, the effect of the hydrostatic pressure, and the wire dimension on the interband optical absorption and the exciton binding energy in a quantum-well wire. We have ...
The electric field effects on intersubband optical absorption of Si delta-doped GaAs layer
(PERGAMON-ELSEVIER SCIENCE LTD, 2003)
The intersubband transitions in Si delta-doped GaAs structures is theoretically investigated for different applied electric fields. For an uniform distribution the electronic structure has been calculated by solving the ...
Intense laser-induced electronic and optical properties in double finite oscillator potential
(TAYLOR & FRANCIS LTD, not define)
In the present paper, a theoretically study of the non-resonant laser field effect on the optical response, such as nonlinear optical rectification (NOR), second (SHG) and third harmonic generation (THG) coefficients in ...