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Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric field
(SPRINGER, 2012)
The effects of intense laser radiation on the exciton states in GaAs-Ga1-xAlxAs quantum dots are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations ...
Intense Laser Field Effects on the Shallow-Donor Impurity States in Rectangular-Shaped Quantum Well Wires
(POLISH ACAD SCIENCES INST PHYSICS, 2014)
Using the effective mass and parabolic band approximations, the binding energy of a shallow donor impurity is calculated in a GaAs-(Ga,Al)As quantum well wire of rectangular transversal section, under the combined effects ...
Donor impurity states and related optical responses in triangular quantum dots under applied electric field
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2014)
The linear and nonlinear coefficients for the optical absorption and relative refractive index change associated with transitions between donor impurity states in a two-dimensional quantum dot of triangular shape under ...
Electron-related optical responses in triangular quantum dots
(ELSEVIER SCIENCE BV, 2014)
The linear and nonlinear coefficients for the optical absorption and relative refractive index change associated with intersubband transitions of electrons in the conduction band of a two-dimensional quantum dot of triangular ...
Linear and nonlinear optical properties in a double inverse parabolic quantum well under applied electric and magnetic fields
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2014)
In the present work, the effects of electric and magnetic fields on the optical absorption coefficient and refractive index changes associated with intersubband transitions in a GaAs/AlxGa1-xAs double inverse parabolic ...
Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well
(WILEY-V C H VERLAG GMBH, 2012)
The effects of intense laser radiation on the exciton states in GaAs-Ga1xAlxAs quantum wells are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations ...
Electronic band structure of GaAs/AlxGa1-xAs superlattice in an intense laser field
(ELSEVIER SCIENCE BV, 2012)
We perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed ...