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Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells
(ELSEVIER SCIENCE BV, 2010)
Within the framework of effective-mass approximation, using a variational method, the effect of high-frequency laser field on intersubband transitions and the binding energy of shallow-donor impurities in a semiconductor ...
The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wires
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2010)
Using a variational approach, we have calculated the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum-well wires under different temperature and hydrostatic pressure conditions. ...