The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wires
Abstract
Using a variational approach, we have calculated the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum-well wires under different temperature and hydrostatic pressure conditions. Our calculation have revealed the dependence of the photoionization cross-section and the impurity binding on temperature and hydrostatic pressure. (c) 2010 Elsevier Ltd. All rights reserved.
Source
SUPERLATTICES AND MICROSTRUCTURESVolume
48Issue
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