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dc.contributor.authorYesilgul, U.
dc.contributor.authorSakiroglu, S.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorSari, H.
dc.contributor.authorSoekmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:13:40Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:13:40Z
dc.date.issued2010
dc.identifier.issn0749-6036
dc.identifier.urihttps://dx.doi.org/10.1016/j.spmi.2010.04.003
dc.identifier.urihttps://hdl.handle.net/20.500.12418/9851
dc.descriptionWOS: 000279761500011en_US
dc.description.abstractUsing a variational approach, we have calculated the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum-well wires under different temperature and hydrostatic pressure conditions. Our calculation have revealed the dependence of the photoionization cross-section and the impurity binding on temperature and hydrostatic pressure. (c) 2010 Elsevier Ltd. All rights reserved.en_US
dc.language.isoengen_US
dc.publisherACADEMIC PRESS LTD- ELSEVIER SCIENCE LTDen_US
dc.relation.isversionof10.1016/j.spmi.2010.04.003en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPhotoionizationen_US
dc.subjectQuantum-well wiresen_US
dc.subjectImpurityen_US
dc.titleThe effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wiresen_US
dc.typearticleen_US
dc.relation.journalSUPERLATTICES AND MICROSTRUCTURESen_US
dc.contributor.department[Yesilgul, U. -- Kasapoglu, E. -- Sari, H.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Sakiroglu, S. -- Soekmen, I.] Dokuz Eylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.identifier.volume48en_US
dc.identifier.issue1en_US
dc.identifier.endpage113en_US
dc.identifier.startpage106en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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