The temperature dependence of the electronic structure of Si ?-doped GaAs
Abstract
We investigated theoretically the change of electronic properties of Si ?-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuniform distribution, which is taken as different from the known Gaussian distribution. In order to obtain the electronic structure we have calculated self-consistent Schrödinger - Poisson equations. We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration.
Source
Turkish Journal of PhysicsVolume
26Issue
6Collections
- Makale Koleksiyonu [5745]