Browsing Nanoteknoloji Mühendisliği Bölümü by Author "868185d5-1c63-4dec-a710-e47a4d15e519"
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Comprehensive growth and characterization study of GeOx/Si
Baghdedi, Dhouha; Hopoğlu, Hicret; Sarıtaş, Sevda; Altuntaş, İsmail; Abdelmoula, Najmeddine; Gür, Emre; ŞenadımTüzemen, Ebru (15.02.2023)In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural and optical ... -
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
Pertikel, İzel; Kekül, Reyhan; Altuntaş, İsmail; Gür, Emre; Demir, İlkay (27.06.2023)Carbon (C)-doped aluminum gallium arsenide ( AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ... -
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
Altuntas, İsmail; Koçak, Merve Nur; Gür, Emre; Yolcu, Gamze; Budak, Hasan Feyzi; Kasapoğlu, A. Emre; Horoz, Sabit; Demir, İlkay (02.02.2021)In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ... -
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
Altuntas, İsmail; Koçak, Merve Nur; Yolcu, Gamze; Budak, Hasan Feyzi; Kasapoğlu, A. Emre; Horoz, Sabit; Gür, Emre; Demir, İlkay (02.02.2021)at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were ...