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Now showing items 11-20 of 82
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.11.2021)
AlN samples have been grown on sapphire substrate using nucleation layers
(NLs) having different growth temperatures. The growth temperature of the NL
has been varied over a wide range of temperatures highlight the effects ...
Vcsel tabanlı yüksek güçlü yarı iletken lazerler
(15.01.2021)
VCSEL’ler (vertical-cavity surface-emitting laser, düşey- kovuklu yüzey-ışımalı lazer) yirmi yılı aşkın bir süredir giderek gelişen veri iletişimi (datacom) alanının anahtar bileşenlerinden birisidir. Bunun yanında son ...
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)
In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates
at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ...
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.09.2021)
AlN samples have been grown on sapphire substrate using nucleation layers
(NLs) having different growth temperatures. The growth temperature of the NL
has been varied over a wide range of temperatures highlight the effects ...
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.08.2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF
magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.07.2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF
magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...
Yüksek Güç-Frekans Uygulamaları Için MOCVD ile Epitaksiyel AlN Kristalinin Büyütülmesi, Katkılanması, Karakterizasyonu ve Aygıt Üretimi
(15.03.2021)
Bu projede yüksek güç-frekans uygulamaları için MOCVD (metal organik kimyasal buhar depolama) ile epitaksiyel AlN kristalinin büyütülmesi, katkılanması, karakterizasyonu ve aygıt üretimi yapılarak diyot karakteristiklerinin ...
Numerical simulation of linear and nonlinear optical properties in heterostructure based on triple Gaussian quantum wells: effects of applied external fields and structural parameters
(26.07.2021)
In this work, we present a theoretical simulation of the impact of applied external
fields and structural parameters on the total (linear plus nonlinear) optical absorption
coefficient (TOAC) and total refractive relative ...
Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential
(15.11.2021)
We are presenting a theoretical investigation on the effects of applied electric,
magnetic, and non-resonant intense laser field on the coefficients of intersubband linear,
third-order nonlinear, and total optical ...
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)
at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and
silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were ...