Binding energy and optical absorption of donor impurity states in "12-6" tuned GaAs/GaAlAs double quantum well under the external fields
Abstract
We have investigated the binding energies of the s-symmetric ground and first excited shallow donor impurity states and the total 1s -> 2s absorption coefficient, including the first and third order corrections, in "12-6" tuned GaAs/GaAlAs double quantum well as a function of the impurity position, size of the structure, and the electric and magnetic field intensities. The obtained results show that the electronic and optical properties of tuned GaAs/GaAlAs double quantum well can be adjustable by an appropriate choice of the sample geometry, material parameters and applied external fields which will lead to new potential applications in optoelectronics.
Source
PHYSICA B-CONDENSED MATTERVolume
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