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dc.contributor.authorAlejandro Vinasco, Juan
dc.contributor.authorAlejandro Londono, Mauricio
dc.contributor.authorLeon Restrepo, Ricardo
dc.contributor.authorEduardo Mora-Ramos, Miguel
dc.contributor.authorFeddi, El Mustapha
dc.contributor.authorRadu, Adrian
dc.contributor.authorKasapoglu, Esin
dc.contributor.authorLuis Morales, Alvaro
dc.contributor.authorAlberto Duque, Carlos
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:38:22Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:38:22Z
dc.date.issued2018
dc.identifier.issn0370-1972
dc.identifier.issn1521-3951
dc.identifier.urihttps://dx.doi.org/10.1002/pssb.201700470
dc.identifier.urihttps://hdl.handle.net/20.500.12418/6327
dc.description12th International Conference on Optics of Surfaces and Interfaces (OSI) -- JUN 25-30, 2017 -- Trin Coll Dublin, Sch Phys, Dublin, IRELANDen_US
dc.descriptionWOS: 000430113000017en_US
dc.description.abstractThe electron states in a holey elliptically shaped GaAs quantum dot are investigated within the effective mass scheme with the use of the adiabatic approximation and the finite element method. The effects of a donor impurity center and an applied electric field are particularly taken into account. Electron-impurity energies are reported as functions of both the geometry of the quantum dot and the applied field intensity, whereas temperature effects are also included. The analysis of electron-impurity intersubband transitions allows the investigation of the light absorption response of the system.en_US
dc.description.sponsorshipCODI-Universidad de Antioquia (Estrategia de Sostenibilidad de la Universidad de Antioquia); CODI-Universidad de Antioquia (research project "Manipulacion de propiedades optoelectronicas de nanoestructuras semiconductoras por ondas acusticas superficiales"); Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia; Universidad EIA; Universidad de Antioquia through the EIA-UdeA-UdeM-project "Desarrollo de fotodetectores en el infrarrojo usando pozos cuanticos ajustables con dopamiento delta dentro del pozo"; Colombian Oil Company ECOPETROL; Colombian Oil Company COLCIENCIAS [0266-2013]en_US
dc.description.sponsorshipThis research was partially supported by Colombian Agencies: CODI-Universidad de Antioquia (Estrategia de Sostenibilidad de la Universidad de Antioquia and research project "Manipulacion de propiedades optoelectronicas de nanoestructuras semiconductoras por ondas acusticas superficiales") and Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD and ALM exclusive dedication projects 2017-2018). RLR and CAD are grateful to Universidad EIA and Universidad de Antioquia for financial support through the EIA-UdeA-UdeM-project "Desarrollo de fotodetectores en el infrarrojo usando pozos cuanticos ajustables con dopamiento delta dentro del pozo." This work is supported by Colombian Oil Company ECOPETROL and COLCIENCIAS as a part of the research project grant No. 0266-2013.en_US
dc.language.isoengen_US
dc.publisherWILEY-V C H VERLAG GMBHen_US
dc.relation.isversionof10.1002/pssb.201700470en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectbinding energyen_US
dc.subjectdonor impurityen_US
dc.subjectellipsoidal quantum doten_US
dc.subjectfinite element methoden_US
dc.subjectGaAsen_US
dc.titleOptical Absorption and Electroabsorption Related to Electronic and Single Dopant Transitions in Holey Elliptical GaAs Quantum Dotsen_US
dc.typearticleen_US
dc.relation.journalPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICSen_US
dc.contributor.department[Alejandro Vinasco, Juan -- Luis Morales, Alvaro -- Alberto Duque, Carlos] Univ Antioquia, Fac Ciencias Exactas & Nat, Inst Fis, Grp Mat Condensada, Calle 70 52-21, Medellin, Colombia -- [Alejandro Londono, Mauricio] Univ Antioquia, Fac Ciencias Exactas & Nat, Inst Matemat, Calle 70 52-21, Medellin, Colombia -- [Leon Restrepo, Ricardo] Univ EIA, Envigado 055428, Colombia -- [Eduardo Mora-Ramos, Miguel] Univ Autonoma Estado Morelos, Ctr Invest Ciencias IICBA, Ave Univ 1001, Cuernavaca 62210, Morelos, Mexico -- [Feddi, El Mustapha] Mohammed V Univ Rabat, ENSET, Grp Optoelect Semicond & Nanomat, Rabat, Morocco -- [Radu, Adrian] Univ Politehn Bucuresti, Dept Phys, 313 Splaiul Independentei, RO-060042 Bucharest, Romania -- [Kasapoglu, Esin] Cumhuriyet Univ, Dept Phys, Fac Sci, TR-58140 Sivas, Turkeyen_US
dc.contributor.authorIDRestrepo, R. L. -- 0000-0002-0359-353X; Feddi, El mustapha -- 0000-0001-6641-3623en_US
dc.identifier.volume255en_US
dc.identifier.issue4en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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