Browsing Nanoteknoloji Mühendisliği Bölümü Makale Koleksiyonu by Category "Rapor"
Now showing items 21-35 of 35
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Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
(28.04.2023)In this study, we investigated the structural, optical, magnetic, and conductive properties of nickel oxide (NiO) films on glass substrates deposited using Radio Frequency (RF) magnetron sputtering with varying Ar ... -
Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
(23.04.2023)In this study, we investigated the structural, optical, magnetic, and conductive properties of nickel oxide (NiO) films on glass substrates deposited using Radio Frequency (RF) magnetron sputtering with varying Ar ... -
Modeling of temperature‑dependent photoluminescence of GaN epilayer by artificial neural network
(22.06.2023)Artificial neural networks (ANNs) are a type of machine learning model that are designed to mimic the structure and function of biological neurons. They are particularly well-suited for tasks such as image and speech ... -
Modeling of temperature‑dependent photoluminescence of GaN epilayer by artificial neural network
(22.06.2023)Artificial neural networks (ANNs) are a type of machine learning model that are designed to mimic the structure and function of biological neurons. They are particularly well-suited for tasks such as image and speech ... -
Optical and nano-mechanical characterization of c-axis oriented AlN film
(2022)This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy (MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic ellipsometry. ... -
Optical and nano-mechanical characterization of c-axis oriented AlN film
(19.05.2022)This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy (MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic ellipsometry. ... -
Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers
(2022)Achieving high threshold current density and high optical confinement are big challenges in the realization of high-performance aluminum gallium nitride (AlGaN)-based deep-ultraviolet (DUV) laser diode (LD). In this work, ... -
Prediction of average shape values of quartz particles by vibrating disc and ball milling using dynamic image analysis based on established time-dependent shape models
(2022)Although grinding kinetics has been the subject of many researches, there is no research examining the shape kinetics of particles ground by different mills using dynamic image analysis (DIA) in the literature. In this ... -
Sensitivity of indium molar fraction in InGaN quantum wells for near-UV light-emitting diodes
(2022)InGaN-based quantum wells (QWs) have higher threading dislocation density (TDD) in InGaN Light-emitting diode (LED). Despite of higher TDD, variation of Indium (In) molar fraction in the QW generate localized excitons ... -
Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
(10.12.2022)Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution X-ray ... -
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
(2022)AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is used as surfactant to improve ... -
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
(3.06.2022)AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is used as surfactant to improve ... -
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
(5.01.2022)The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted for ... -
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
(2022)The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted ... -
ystematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
(2022)Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution X-ray ...