Browsing Nanoteknoloji Mühendisliği Bölümü Makale Koleksiyonu by Author "Yolcu, Gamze"
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Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
Altuntas, İsmail; Koçak, Merve Nur; Gür, Emre; Yolcu, Gamze; Budak, Hasan Feyzi; Kasapoğlu, A. Emre; Horoz, Sabit; Demir, İlkay (02.02.2021)In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ... -
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
Altuntas, İsmail; Koçak, Merve Nur; Yolcu, Gamze; Budak, Hasan Feyzi; Kasapoğlu, A. Emre; Horoz, Sabit; Gür, Emre; Demir, İlkay (02.02.2021)at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were ... -
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
Şimşek, İrem; Yolcu, Gamze; Koçak, Merve Nur; Pürlü, Kağan; Altuntas, İsmail; Demir, İlkay (20.11.2021)AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects ... -
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
Şimşek, İrem; Yolcu, Gamze; Koçak, Merve Nur; Pürlü, Kağan; Altuntas, İsmail; Demir, İlkay (20.09.2021)AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects ...