Browsing Nanoteknoloji Mühendisliği Bölümü Makale Koleksiyonu by Subject "InGaAs, metal organic vapor phase epitaxy, arsine, V/III ratio, thin film"
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Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
(07.06.2021)Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640°C are investigated. While all other sources ...