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Now showing items 21-30 of 54
Linear and nonlinear optical properties of a superlattice with periodically increased well width under electric and magnetic fields
(Elsevier, 14.04.2022)
In this paper, we have studied the electronic and optical properties of GaAs/AlxGa1-xAs superlattice
with periodically increased well width. Under effective mass approximation, the finite
element method is used to obtain ...
Intense laser field effect on the nonlinear optical properties of triple quantum wells consisting of parabolic and inverse-parabolic quantum wells
(IOP Publishing, 25.02.2022)
The nonlinear optical rectification, the second harmonic generation coefficient, and the third
harmonic generation coefficient in parabolic-inverse parabolic-parabolic quantum wells
(PIPPQWs) and inverse parabolic-para ...
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
(3.06.2022)
AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of
its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is
used as surfactant to improve ...
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
(5.01.2022)
The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High
indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted
for ...
In-situ and ex-situ face-to-face annealing of epitaxial AlN
(26.06.2022)
AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE). The changes in the film structure have been investigated by applying different annealing processes which are exsitu ...
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(16.01.2022)
teristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. Adjustment of growth kinetics is very important to control the doping. Therefore, pulsed atomic layer epitaxy ...
Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
(10.12.2022)
Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration
grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution
X-ray ...
In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN
(3.09.2022)
The impact of thermal surface cleaning on epitaxial AlN thin films grown on sapphire is investigated in this study
at various temperatures. The sapphire substrate is cleaned in a hydrogen environment. Structural, optical, ...
Optical and nano-mechanical characterization of c-axis oriented AlN film
(19.05.2022)
This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy
(MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic
ellipsometry. ...
Determination of Optical Properties of MOVPE‑Grown InxGa1‑xAs/ InP Epitaxial Structures by Spectroscopic Ellipsometry
(24.08.2022)
InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the ...