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The effect of intense laser field on the photoionization cross-section and binding energy of shallow donor impurities in graded quantum-well wire under an electric field
(IOP PUBLISHING LTD, 2006)
The laser-field dependence of the impurity binding energy and donor-related photoionization cross-section in graded quantum-well wire under an external static electric field is calculated by a variational method and in the ...
Shallow donors in a coupled triple graded quantum well under the electric and magnetic fields
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2006)
The binding energy of the donor in three different shaped triple graded GaAs-(Ga, Al)As quantum wells which is obtained by changing the depth of the central-well potential (V-o) is calculated by using a variational approach. ...
ELECTRONIC STRUCTURE AND BAND BENDING OF MODULATION-DOPED GaAs/Al-x Ga1-xAs SYMMETRIC AND ASYMMETRIC DOUBLE QUANTUM WELLS UNDER AN APPLIED ELECTRIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2009)
In this study, we have calculated theoretically the effects of the electric field and doping concentration on the sub-band energies, the electron population, and total charge density in modulation-doped symmetric and ...
Binding energies of donor impurities in modulation-doped GaAs/AlxGa1-xAs double quantum wells under an electric field
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)
In this study, we have investigated theoretically the binding energies of shallow donor impurities in modulation-doped GaAs/Al0.33Ga0.67 As double quantum wells (DQWs) under an electric field which is applied along the ...
Effect of hydrostatic pressure on interband transitions in coupled quantum wires
(IOP PUBLISHING LTD, 2007)
We calculate the exciton binding energy and interband optical absorption in a rectangular coupled quantum wire under the hydrostatic pressure in the effective-mass approximation, using the variational approach. It is found ...
Photoionization cross-section and binding energy of donor impurities in GaAs, Ge and Si quantum wires with infinite barriers
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)
Within the effective-mass approximation, we have investigated the binding energies of donor impurities as a function of the wire dimensions and the photoionization cross-section for a hydrogenic donor impurity placed on ...
FINITE ELEMENT ANALYSIS OF VALENCE BAND STRUCTURE OF SQUARE QUANTUM WELL UNDER THE ELECTRIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2009)
Valence band structure with spin-orbit (SO) coupling of GaAs/Ga1-xAlxAs square quantum well (SQW) under the electric field by a calculation procedure based on a finite element method (FEM) is investigated using the multiband ...
Binding energy of donor impurities in double inverse parabolic quantum well under electric field
(ELSEVIER SCIENCE BV, 2009)
In this study, effects of the electric field applied along the growth direction on the binding energy of donor impurities in double inverse parabolic quantum well (DIPQW) with different well and barrier widths, as well as ...
The hydrostatic pressure and temperature effects on donor impurities in GaAs/Ga1-xAlxAs double quantum well under the external fields
(ELSEVIER SCIENCE BV, 2008)
The combined effects of hydrostatic pressure and temperature on donor impurity binding energy in GaAs/Ga0.7Al0.3As double quantum well in the presence of the electric and magnetic fields which are applied along the growth ...
The electric field dependence of the photoionization cross-section of shallow donor impurities in quantum dots: Infinite and finite model
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2006)
Using a variational approach, we have calculated the photo-ionization cross-section of a shallow donor impurity in a quantum dot with finite and infinite potential barriers in the presence of an electric field as a function ...