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Binding energy of hydrogenic impurities in a quantum well under the tilted magnetic field
(PERGAMON-ELSEVIER SCIENCE LTD, 2003)
This paper treats theoretically the angle dependence of the ground state binding energy of a shallow donor impurity in semiconductor quantum-well systems on the tilted magnetic field. By making an appropriate coordinate ...
The electric field dependence of a donor impurity in graded GaAs quantum wires
(SPRINGER HEIDELBERG, 2004)
The effect of the electric field on the binding energy of the ground state of a shallow donor impurity in a graded GaAs quantum-well wire (GQWW) was investigated. The electric field was applied parallel to the symmetry ...
Magnetic field and intense laser radiation effects on the interband transitions in quantum well wires
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)
Magnetic field and intense laser radiation effects on the exciton binding energy and interband optical transitions in quantum well wires is calculated using a variational method and in the effective mass approximation. The ...
Influence of an applied electric field on the electronic properties of Si delta-doped GaAs
(E D P SCIENCES, 2003)
We have theoretically studied the electronic structure of Si delta-doped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence ...
The photoionization cross-section and binding energy of impurities in quantum wires: Effects of the electric and magnetic field
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)
Using a variational approach, we have calculated the impurity position dependence of the photoionizaton cross-section and the binding energy for a hydrogenic donor impurity in a quantum well wire in the presence of the ...
The effect of an intense laser field on magneto donors in semiconductors
(ELSEVIER SCIENCE BV, 2003)
The laser-field dependence of the binding energy of shallow-donor impurities in graded, and square quantum wells under the external magnetic field is calculated by a variational method and in the effective mass approximation. ...
Hydrogenic impurities in graded GaAs-(Ga,Al)As quantum-well wires in an electric field
(ELSEVIER SCIENCE BV, 2002)
The electric field dependence of polarizability and binding energy of shallow-donor impurities in graded quantum-well wires is calculated by a variational method and in the effective-mass approximation. We have considered ...
An alternative method for the exact calculation of Wannier-Stark localization in superlattices
(ACADEMIC PRESS LTD, 2001)
We present an alternative method for the exact calculations of the Wannier-Stark (WS) localization in a long periodic potential corresponding to a (50 Angstrom /30 Angstrom) GaAs/Ga0.7Al0.3As superlattice. We show that the ...
Intense field effects on shallow donor impurities in graded quantum wells
(IOP PUBLISHING LTD, 2003)
Using a variational method and within the effective mass approximation, we calculate the laser-field dependence of binding energy and the polarizability of shallow-donor impurities in graded quantum wells under an external ...
Influence of temperature on the electronic properties of Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have investigated theoretically the electronic structure of Si delta-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and ...