| dc.contributor.author | Ungan, Fatih | |
| dc.contributor.author | Yesilgul, Unal | |
| dc.contributor.author | Sakiroglu, Serpil | |
| dc.contributor.author | Kasapoglu, Esin | |
| dc.contributor.author | Erol, Ayse | |
| dc.contributor.author | Arikan, Mehmet Cetin | |
| dc.contributor.author | Sari, Huseyin | |
| dc.contributor.author | Sokmen, Ismail | |
| dc.date.accessioned | 2019-07-27T12:10:23Z | |
| dc.date.accessioned | 2019-07-28T10:03:19Z | |
| dc.date.available | 2019-07-27T12:10:23Z | |
| dc.date.available | 2019-07-28T10:03:19Z | |
| dc.date.issued | 2012 | |
| dc.identifier.issn | 1556-276X | |
| dc.identifier.uri | https://dx.doi.org/10.1186/1556-276X-7-606 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12418/8981 | |
| dc.description | WOS: 000312087300001 | en_US |
| dc.description | PubMed ID: 23113959 | en_US |
| dc.description.abstract | Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga (x) In1 - x N (y) As1 - y /GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - x In (x) N (y) As1 - y /GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization. | en_US |
| dc.description.sponsorship | Scientific and Technological Research Council of Turkey (TUBITAK) [COST 109 T650]; Scientific Research Project Fund of Cumhuriyet University [F-360] | en_US |
| dc.description.sponsorship | This work was supported by The Scientific and Technological Research Council of Turkey (TUBITAK) for a research grant COST 109 T650 and was partially supported by the Scientific Research Project Fund of Cumhuriyet University under the project number F-360. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | SPRINGER | en_US |
| dc.relation.isversionof | 10.1186/1556-276X-7-606 | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.subject | Double quantum well | en_US |
| dc.subject | Intense laser field | en_US |
| dc.subject | Dilute nitride | en_US |
| dc.title | Effects of an intense, high-frequency laser field on bound states in Ga1-xInxNyAs1-y/GaAs double quantum well | en_US |
| dc.type | review | en_US |
| dc.relation.journal | NANOSCALE RESEARCH LETTERS | en_US |
| dc.contributor.department | [Ungan, Fatih -- Yesilgul, Unal -- Kasapoglu, Esin -- Sari, Huseyin] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Sakiroglu, Serpil -- Sokmen, Ismail] Dokuz Eylul Univ, Dept Phys, TR-35140 Izmir, Turkey -- [Erol, Ayse -- Arikan, Mehmet Cetin] Istanbul Univ, Dept Phys, TR-34459 Istanbul, Turkey | en_US |
| dc.identifier.volume | 7 | en_US |
| dc.relation.publicationcategory | Diğer | en_US |
