The effects of the intense laser field on bound states in GaxIn1-x NyAs1-y/GaAs single quantum well
Abstract
We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in Ga (x) In1- (x) N (y) As1- (y) N/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides.
Source
EUROPEAN PHYSICAL JOURNAL BVolume
80Issue
1Collections
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