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dc.contributor.authorUngan, F.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorDuque, C. A.
dc.contributor.authorYesilgul, U.
dc.contributor.authorSakiroglu, S.
dc.contributor.authorSokmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:05:53Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:05:53Z
dc.date.issued2011
dc.identifier.issn1434-6028
dc.identifier.issn1434-6036
dc.identifier.urihttps://dx.doi.org/10.1140/epjb/e2011-10902-y
dc.identifier.urihttps://hdl.handle.net/20.500.12418/9590
dc.descriptionWOS: 000288657700012en_US
dc.description.abstractWe have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in Ga (x) In1- (x) N (y) As1- (y) N/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides.en_US
dc.language.isoengen_US
dc.publisherSPRINGERen_US
dc.relation.isversionof10.1140/epjb/e2011-10902-yen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleThe effects of the intense laser field on bound states in GaxIn1-x NyAs1-y/GaAs single quantum wellen_US
dc.typearticleen_US
dc.relation.journalEUROPEAN PHYSICAL JOURNAL Ben_US
dc.contributor.department[Ungan, F. -- Kasapoglu, E. -- Yesilgul, U.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Duque, C. A.] Univ Antioquia, Inst Fis, Medellin 1226, Colombia -- [Sakiroglu, S. -- Sokmen, I.] Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkeyen_US
dc.identifier.volume80en_US
dc.identifier.issue1en_US
dc.identifier.endpage93en_US
dc.identifier.startpage89en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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