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dc.contributor.authorYesilgul, U.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorSari, H.
dc.contributor.authorSokmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:06:57Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:06:57Z
dc.date.issued2010
dc.identifier.issn0749-6036
dc.identifier.urihttps://dx.doi.org/10.1016/j.spmi.2010.09.005
dc.identifier.urihttps://hdl.handle.net/20.500.12418/9741
dc.descriptionWOS: 000285220100001en_US
dc.description.abstractUsing a variational approach we have calculated the hydrostatic pressure and temperature effects on the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum dots Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on temperature and hydrostatic pressure (C) 2010 Elsevier Ltd All rights reserveden_US
dc.language.isoengen_US
dc.publisherACADEMIC PRESS LTD- ELSEVIER SCIENCE LTDen_US
dc.relation.isversionof10.1016/j.spmi.2010.09.005en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPhotolonizatonen_US
dc.subjectQuantum doten_US
dc.subjectImpurityen_US
dc.titleThe effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of shallow donor impurities in quantum dotsen_US
dc.typereviewen_US
dc.relation.journalSUPERLATTICES AND MICROSTRUCTURESen_US
dc.contributor.department[Yesilgul, U. -- Kasapoglu, E. -- Sari, H.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Sokmen, I.] Dokuz Eylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.identifier.volume48en_US
dc.identifier.issue6en_US
dc.identifier.endpage516en_US
dc.identifier.startpage509en_US
dc.relation.publicationcategoryDiğeren_US


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