The variation of electronic properties with the doping concentration of modulation-doped AlxGa1-xAs-GaAs double quantum wells

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dc.authoridOZTURK, EMINE -- 0000-0003-2508-0863en_US
dc.contributor.authorUngan, Fatih
dc.contributor.authorOzturk, Emine
dc.contributor.authorErgun, Yuksel
dc.contributor.authorSokmen, Ismail
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:17:33Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:17:33Z
dc.date.issued2007
dc.departmentCumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- Anadolu Univ, Dept Phys, Eskisehir, Turkey -- Dokuz Eylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.description.abstractIn this paper we have calculated the sub-band structure and the confinement potential of modulation-doped Ga1-xAlxAs-GaAs double quantum wells as a function of the doping concentration. The electronic properties of this structure were determined by self-consistent solutions of the Schrodinger and Poisson equations. To understand the effects of doping concentration on band bending, sub-band energies, and sub-band populations, the doping concentration on one right side of the structure is decreased while holding it constant on the left side. We found that at low doping concentrations on the right side, the effects of the doping concentration are more pronounced on band bending and sub-band populations. (c) 2006 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.spmi.2006.09.006en_US
dc.identifier.endpage28en_US
dc.identifier.issn0749-6036
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-33846794513en_US
dc.identifier.scopusqualityQ2
dc.identifier.startpage22en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.spmi.2006.09.006
dc.identifier.urihttps://hdl.handle.net/20.500.12418/10737
dc.identifier.volume41en_US
dc.identifier.wosWOS:000244683300004en_US
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherACADEMIC PRESS LTD ELSEVIER SCIENCE LTDen_US
dc.relation.ispartofSUPERLATTICES AND MICROSTRUCTURESen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectlow dimensional systemsen_US
dc.subjectdouble quantum wellen_US
dc.titleThe variation of electronic properties with the doping concentration of modulation-doped AlxGa1-xAs-GaAs double quantum wellsen_US
dc.typeArticleen_US

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