Optical and structural properties of In-rich InxGa1-xAs epitaxial layers on (100) InP for SWIR detectors

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dc.authoridsmiri, badreddine/0000-0002-4032-3731
dc.authoriddkhil, brahim/0000-0002-9862-625X
dc.authoridBEN ARBIA, Marwa/0000-0002-7556-7111
dc.contributor.authorSmiri, Badreddine
dc.contributor.authorBen Arbia, Marwa
dc.contributor.authorIlkay, Demir
dc.contributor.authorSaidi, Faouzi
dc.contributor.authorOthmen, Zied
dc.contributor.authorDkhil, Brahim
dc.contributor.authorIsmail, Altuntas
dc.date.accessioned2024-10-26T18:11:23Z
dc.date.available2024-10-26T18:11:23Z
dc.date.issued2020
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractIn-rich InxGa1-xAs epitaxial layers were grown on InP (100) substrates by a metalorganic vapor phase epitaxy (MOVPE) technique. The effect of Indium (In) composition on the crystalline quality and optical properties are investigated. High resolution X-ray diffraction (HR-XRD) measurement and Raman scattering spectrum are used to evaluate the crystalline quality, the residual strain and dislocation density property. The number of dislocations in the epitaxial layers is found to increase by increasing the Indium content in order to release the stresses due to the epitaxial clamping. Photoluminescence (PL) measurement is used to characterize the optical properties. At 10 K, PL measurements show that the InGaAs band gap redshifts with the indium content. Moreover, the asymmetry at the low-energy side of the PL peak has been attributed to the presence of localized excitons. In all samples, a blue shift of PL peaks is evidenced by increasing the excitation power density, which is in line with the presence of carrier's localization and non-idealities in this system. Moreover, the temperature-dependence of the PL peak energy displays an unusual red-blue-red shift (S-shaped) behavior when raising the temperature. These observations can be related to the inhomogeneous distribution of indium which gives rise to the appearance of dislocations and other defects which serve as traps for charge carriers. Interestingly, those highly In-content InxGa1-xAs epitaxial layers show PL emission located between 1637 and 1811 nm (depending on In content) and thus might be suitable for in the design of novel heterostructure devices such as short wave infrared (SWIR) detectors.
dc.identifier.doi10.1016/j.mseb.2020.114769
dc.identifier.issn0921-5107
dc.identifier.issn1873-4944
dc.identifier.scopus2-s2.0-85090887826
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.mseb.2020.114769
dc.identifier.urihttps://hdl.handle.net/20.500.12418/30653
dc.identifier.volume262
dc.identifier.wosWOS:000588337000003
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofMaterials Science and Engineering B-Advanced Functional Solid-State Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectRich indium content
dc.subjectDislocation
dc.subjectLattice mismatch
dc.subjectResidual stress
dc.subjectHR-XRD
dc.subjectRaman
dc.subjectPL
dc.subjectCarrier localization
dc.titleOptical and structural properties of In-rich InxGa1-xAs epitaxial layers on (100) InP for SWIR detectors
dc.typeArticle

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