AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn

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dc.authoridGur, Emre/0000-0002-3606-2751
dc.authoridELAGOZ, Sezai/0000-0002-3600-8640
dc.authoridKocak, Yusuf/0000-0003-4511-1321
dc.authoridRazeghi, Manijeh/0000-0002-7762-6904
dc.contributor.authorDemir, Ilkay
dc.contributor.authorKocak, Yusuf
dc.contributor.authorKasapoglu, A. Emre
dc.contributor.authorRazeghi, Manijeh
dc.contributor.authorGur, Emre
dc.contributor.authorElagoz, Sezai
dc.date.accessioned2024-10-26T18:09:26Z
dc.date.available2024-10-26T18:09:26Z
dc.date.issued2019
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractWe report a new growth approach pulsed co-doping growth of AlxGa1-xN (x > 0.5) epilayers on AlN/Al2O3 templates by metal organic vapor phase epitaxy (MOVPE). Using this approach SiH4 (silane) and TMIn (trimethylindium) supplied to the growth chamber alternately and pulsed during the growth of AlGaN epilayers. Structural and morphological quality of AlGaN epilayers were investigated by high resolution x-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) techniques. It has shown that higher crystalline quality with low full width at half maximum (FWHM) and smoother surface morphology with reduced hexagonal hillock density has been obtained by the pulsed codoping growth approach. Volcano like hillock structures has been confirmed by Raman mapping.
dc.description.sponsorshipTUBITAK [117F339]
dc.description.sponsorshipThe authors acknowledge the usage of Nanophotonics Research and Application Center at Sivas Cumhuriyet University (CUNAM) facilities. This work is supported by the TUBITAK under project number 117F339.
dc.identifier.doi10.1088/1361-6641/ab2782
dc.identifier.issn0268-1242
dc.identifier.issn1361-6641
dc.identifier.issue7
dc.identifier.scopus2-s2.0-85070716539
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1088/1361-6641/ab2782
dc.identifier.urihttps://hdl.handle.net/20.500.12418/30102
dc.identifier.volume34
dc.identifier.wosWOS:000490565400012
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofSemiconductor Science and Technology
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAlGaN
dc.subjectmetal organic vapor phase epitaxy
dc.subjectSEM
dc.subjectAFM
dc.subjectovergrown
dc.subjecthillock
dc.titleAlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn
dc.typeArticle

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