Structural and electrical properties of nitrogen-doped ZnO thin films

Basit Öğe Kaydı
dc.authoridkara, kamuran -- 0000-0002-9598-8108; Kara, Kamuran -- 0000-0002-9598-8108; TAKCI, DENIZ KADIR -- 0000-0002-9841-242Xen_US
dc.contributor.authorTuzemen, Ebru Senadim
dc.contributor.authorKara, Kamuran
dc.contributor.authorElagoz, Sezai
dc.contributor.authorTakci, Deniz Kadir
dc.contributor.authorAltuntas, Ismail
dc.contributor.authorEsen, Ramazan
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:56:48Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:56:48Z
dc.date.issued2014
dc.department[Tuzemen, Ebru Senadim] Cumhuriyet Univ, Dept Phys, Nanotechnol Ctr, TR-58140 Sivas, Turkey -- [Kara, Kamuran] Istanbul Univ, Dept Phys, TR-34314 Istanbul, Turkey -- [Elagoz, Sezai -- Altuntas, Ismail] Cumhuriyet Univ, Dept Nanotechnol Engn, Nanotechnol Ctr, TR-58140 Sivas, Turkey -- [Takci, Deniz Kadir -- Esen, Ramazan] Cukurova Univ, Dept Phys, TR-01330 Adana, Turkeyen_US
dc.description9th Nanoscience and Nanotechnology Conference (NANOTR) -- JUN 24-28, 2013 -- Erzurum, TURKEYen_US
dc.description.abstractZnO and nitrogen-doped ZnO thin films were prepared onto glass substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system at room temperature. The influence of doping on the structural, electrical and optical properties of thin films was investigated. XRD studies were carried out to analyze and compare the structural quality of undoped and nitrogen-doped ZnO films. Raman measurement was performed to study the doping effects in the ZnO. The optical transmittances of all films are studied as a function of wavelength using UV-VIS-NIR spectrophotometer. The optical band gap values of the films are found using absorbance spectrums. The electrical studies for the films are carried out by using Hall-effect measurements. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipScientific Research Project Fund of Cumhuriyet University [F-382]en_US
dc.description.sponsorshipThis research was supported by Scientific Research Project Fund of Cumhuriyet University under the project number F-382. The Authors thank to Ozge Baglayan from Anadolu University for Raman measurements.en_US
dc.identifier.doi10.1016/j.apsusc.2014.02.118en_US
dc.identifier.endpage163en_US
dc.identifier.issn0169-4332
dc.identifier.issn1873-5584
dc.identifier.scopus2-s2.0-84909948571en_US
dc.identifier.scopusqualityQ1
dc.identifier.startpage157en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.apsusc.2014.02.118
dc.identifier.urihttps://hdl.handle.net/20.500.12418/8135
dc.identifier.volume318en_US
dc.identifier.wosWOS:000344380500030en_US
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.ispartofAPPLIED SURFACE SCIENCEen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectX-ray diffractionen_US
dc.subjectOptical propertiesen_US
dc.subjectRaman spectroscopyen_US
dc.titleStructural and electrical properties of nitrogen-doped ZnO thin filmsen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu