Inter-sub-band transitions and binding energies of donor impurities in a modulation-doped quantum well in the presence of electric field

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dc.contributor.authorUngan, Fatih
dc.contributor.authorKasapoglu, Esin
dc.contributor.authorSari, Hueseyin
dc.contributor.authorSoekmen, Ismail
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:13:59Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:13:59Z
dc.date.issued2009
dc.department[Ungan, Fatih -- Kasapoglu, Esin -- Sari, Hueseyin] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Soekmen, Ismail] Dokuz Eylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.description.abstractIn this study, we have investigated theoretically the effects of the electric field and doping concentration on the optical transitions in a modulation-doped GaAs-AlGaAs quantum well for different well widths. The binding energies of the donor have also been computed using a trial wave function with two parameters in the framework of an effective-mass approximation. The electronic structure of a modulation-doped quantum well under the electric field is determined by solving the Schrodinger and Poisson equations self-consistently in the effective-mass approximation. The results obtained show that inter-sub-band transitions and the energy levels in the modulation-doped quantum well can be significantly modified and controlled by the well width and donor concentration. The sensitivity to the well widths of the absorption coefficient can be used in various optical semiconductor devices' applications. (C) 2009 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.spmi.2009.08.007en_US
dc.identifier.endpage871en_US
dc.identifier.issn0749-6036
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-70350704684en_US
dc.identifier.scopusqualityQ2
dc.identifier.startpage864en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.spmi.2009.08.007
dc.identifier.urihttps://hdl.handle.net/20.500.12418/10022
dc.identifier.volume46en_US
dc.identifier.wosWOS:000272817600009en_US
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherACADEMIC PRESS LTD- ELSEVIER SCIENCE LTDen_US
dc.relation.ispartofSUPERLATTICES AND MICROSTRUCTURESen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectModulation-dopeden_US
dc.subjectInter-sub-band transitionsen_US
dc.subjectImpurity binding energyen_US
dc.titleInter-sub-band transitions and binding energies of donor impurities in a modulation-doped quantum well in the presence of electric fielden_US
dc.typeArticleen_US

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