Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
| dc.authorid | 0000-0002-3979-7868 | tr |
| dc.contributor.author | Altuntas, İsmail | |
| dc.contributor.author | Koçak, Merve Nur | |
| dc.contributor.author | Yolcu, Gamze | |
| dc.contributor.author | Budak, Hasan Feyzi | |
| dc.contributor.author | Kasapoğlu, A. Emre | |
| dc.contributor.author | Horoz, Sabit | |
| dc.contributor.author | Gür, Emre | |
| dc.contributor.author | Demir, İlkay | |
| dc.date.accessioned | 2022-05-12T07:43:02Z | |
| dc.date.available | 2022-05-12T07:43:02Z | |
| dc.date.issued | 02.02.2021 | tr |
| dc.department | Mühendislik Fakültesi | tr |
| dc.description.abstract | at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were investigated by secondary ion mass spectroscopy (SIMS). It was observed that O and Si concentration change with growth temperature of epilayers as well as the interface significantly. HRXRD (high-resolution x-ray diffraction) analyses showed that the highest growth temperature results with the lowest full width at half maximum (FWHM) value for both ɷ scans. Scanning electron microscope (SEM) and atomic force microscopy (AFM) analyses indicated that relatively low growth temperature grown samples gave rise to 2D-like growth mode with openings while increased growth temperature resulted in change the growth mode to a columnar mode with increasing V-shape pits because of the increasing diffusion coefficient of O impurities and Si atoms in AlN epilayers. | tr |
| dc.identifier.citation | Altuntas, I., Kocak, M. N., Yolcu, G., Budak, H. F., Kasapoğlu, A. E., Horoz, S., ... & Demir, I. (2021). Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111). Materials Science in Semiconductor Processing, 127, 105733. | tr |
| dc.identifier.scopus | 2-s2.0-85100259040 | en_US |
| dc.identifier.scopusquality | N/A | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12418/12871 | |
| dc.identifier.wos | WOS:000633206500002 | en_US |
| dc.identifier.wosquality | Q2 | |
| dc.indekslendigikaynak | Web of Science | en_US |
| dc.indekslendigikaynak | Scopus | en_US |
| dc.language.iso | en | en_US |
| dc.relation.publicationcategory | Uluslararası Editör Denetimli Dergide Makale | tr |
| dc.rights | info:eu-repo/semantics/openAccess | tr |
| dc.subject | PALE, AlN, Epitaxial growth, MOVPE | tr |
| dc.title | Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111) | en_US |
| dc.type | Article | en_US |
