Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes

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dc.authoridELAGOZ, Sezai -- 0000-0002-3600-8640en_US
dc.contributor.authorDogan, Hulya
dc.contributor.authorElagoz, Sezai
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:57:01Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:57:01Z
dc.date.issued2014
dc.department[Dogan, Hulya] Cumhuriyet Univ, Dept Elect Elect Engn, TR-58140 Sivas, Turkey -- [Elagoz, Sezai] Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey -- [Elagoz, Sezai] Cumhuriyet Univ, Nanotechnol Res Ctr, TR-58140 Sivas, Turkeyen_US
dc.description.abstractThe temperature-dependent electrical properties of (Au/Ni)n-GaN Schottky barrier diodes (SBDs)have been investigated in the wide temperature range of 40-400 K. The analysis of the main electrical characteristics such as zero-bias barrier height (Phi(B0)), ideality factor (n) and series resistance (R-s) were found strongly temperature dependent. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution (GD) of barrier heights (BHs) at the interface. It is evident that the diode parameters such as zero-bias barrier height increases and the ideality factor decreases with increasing temperature. The values of series resistance that are obtained from Cheung's method are decreasing with increasing temperature. The temperature dependence of Schottky barrier height (SBD) and ideality factor (n) are explained by invoking three sets of Gaussian distribution of (SBH) in the temperature ranges of 280-400 K. 120-260 K and 40-100 K. respectively. (Au/Ni)/n-GaN Schottky barrier diode have been shown a Gaussian distribution giving mean BHs (Phi) over bar (B0)) of 1.167, 0.652 and 0.356 eV and standard deviation sigma(s) of 0.178, 0.087 and 0.133 V for the three temperature regions. A modified In(I-0/T-2) q(2)sigma(2)/2k(2)T(2) vs. 1/kT plot have given (Phi) over bar (B0) and A* as 1.173 eV and 34.750 A/cm(2) K-2, 0.671 eV and 26293 A/cm(2) K-2, 0.354 eV and 10.199 A/cm(2) K-2, respectively. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.physe.2014.04.019en_US
dc.identifier.endpage192en_US
dc.identifier.issn1386-9477
dc.identifier.issn1873-1759
dc.identifier.scopus2-s2.0-84903220425en_US
dc.identifier.scopusqualityQ2
dc.identifier.startpage186en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.physe.2014.04.019
dc.identifier.urihttps://hdl.handle.net/20.500.12418/8198
dc.identifier.volume63en_US
dc.identifier.wosWOS:000340627000027en_US
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.ispartofPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURESen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky barrier heighten_US
dc.subjectCurrent transport mechanismen_US
dc.subjectBarrier inhomogeneitiesen_US
dc.subjectSeries resistanceen_US
dc.titleTemperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodesen_US
dc.typeArticleen_US

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