Modeling of electronic spectra and optical responses of a semiconductor AlGaAs/GaAs quantum well with three-step barriers: the role of external perturbations and impurity

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dc.authoridHaghighatzadeh, Azadeh/0000-0003-2113-4334
dc.contributor.authorHaghighatzadeh, Azadeh
dc.contributor.authorAttarzadeh, Amin
dc.contributor.authorSalman Durmuslar, Aysevil
dc.contributor.authorBahadir, A. l Emre
dc.contributor.authorUngan, Fatih
dc.date.accessioned2024-10-26T18:09:07Z
dc.date.available2024-10-26T18:09:07Z
dc.date.issued2024
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractMulti-quantum barriers are of great importance in band engineering technologies and optoelectronics as they can build up quantum confinement via enhanced barrier heights. This theoretical study comprehensively investigated intersubband electronic and optical properties of an AlGaAs-based quantum well with three-step barriers. The electronic studies were performed within envelope wave functions and effective mass approximations under non-perturbative theory with hydrogenic donor impurity. The linear and the third-order nonlinear optical absorption coefficients and relative refractive index changes were examined under density matrix formalism taking into account a two-level system. Calculations were complicated to explore the role of externally applied static electric, magnetic and intense laser fields, and the donor impurity. The results showed an enhancement in the transition energies with incrementing all three external perturbations which is more impressive in the presence of a centrally positioned donor impurity. In the continue, the binding energies of donor impurity showed different affectability in the presence of external fields and the position of donor impurity. The binding energies were also found to be bigger as the donor impurity was localized at the highest probability of electron wave function. A blue-shift was detected in intersubband optical responses by enhancing all three applied fields in the presence and absence of donor impurity. The optical characteristics exhibited strongly decreased magnitudes after the addition of central impurity atom in both the presence and the absence of externally applied fields. Our findings provide a platform to design nonlinear devices for potential applications in optoelectronic technologies.
dc.description.sponsorshipAhvaz Branch of Islamic Azad University and Sivas Cumhuriyet University
dc.description.sponsorshipThe current study was partially supported by Ahvaz Branch of Islamic Azad University and Sivas Cumhuriyet University, and the authors would like to thank the Research Council for their generous support of this work.
dc.identifier.doi10.1140/epjp/s13360-024-05165-4
dc.identifier.issn2190-5444
dc.identifier.issue4
dc.identifier.scopus2-s2.0-85191418042
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1140/epjp/s13360-024-05165-4
dc.identifier.urihttps://hdl.handle.net/20.500.12418/29963
dc.identifier.volume139
dc.identifier.wosWOS:001319582500001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer Heidelberg
dc.relation.ispartofEuropean Physical Journal Plus
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleModeling of electronic spectra and optical responses of a semiconductor AlGaAs/GaAs quantum well with three-step barriers: the role of external perturbations and impurity
dc.typeArticle

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