Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

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dc.contributor.authorMarva Ben Arbia, Bedreddine Smiri, DEMİR İLKAY, Faouzi Saidi, ALTUNTAŞ İSMAİL, Fredj Hassen, Hassen Maaref,
dc.date.accessioned2023-06-23T09:34:59Z
dc.date.available2023-06-23T09:34:59Z
dc.date.issued2022tr
dc.departmentMühendislik Fakültesitr
dc.description.abstractThe free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted for Infrared optoelectronic devices. In this work, the temperature dependent photoluminescence (TDPL) analysis of In-rich InxGa1− xAs (x = 0.65: S1, x = 0.661: S2, and x = 0.667 S3) samples is of the central focus. The S-shaped behavior recorded at low temperature range in the III-V ternary is quantitatively studied herein by Localized State Ensemble (LSE) model. A comparison between the semi-empirical evolution of luminescence versus temperature and our numerical simulation proves the adequacy of computational details, used in LSE model, in well reproducing the S-shape feature. The numerical simulation well matched with PL spectra proving that the localization phenomenon is stronger when increasing the Indium mole fraction. The clustering effect in In-rich structure seems to be beneficial for enhancing the carrier localization within InxGa1− xAs by localizing carriers from away extended defects that behave probably as non-radiative centers. This is indicative of the utmost importance of localization phenomenon in trapping carriers within localized states instead of dislocations and defects, owing to clustering of indium atoms.tr
dc.identifier.scopus2-s2.0-85122318050en_US
dc.identifier.scopusqualityN/A
dc.identifier.urihttps://hdl.handle.net/20.500.12418/14063
dc.identifier.wosWOS:000788278400002en_US
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.relation.publicationcategoryRaportr
dc.rightsinfo:eu-repo/semantics/closedAccesstr
dc.titleTheoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InPen_US
dc.typeArticleen_US

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