Close oxygen coupled low-pressure chemical vapor deposition growth of high quality ? - Ga2O3 on sapphire

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dc.authoridAKYOL, FATIH/0000-0003-4277-4234
dc.contributor.authorAkyol, Fatih
dc.contributor.authorDemir, Ilkay
dc.date.accessioned2024-10-26T18:05:49Z
dc.date.available2024-10-26T18:05:49Z
dc.date.issued2022
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractWe report on the close oxygen coupled low-pressure chemical vapor deposition (COC-LPCVD) hetero-epitaxial growth of atomically smooth (-201) oriented beta-Ga2O3 on c-plane sapphire. Utilizing a dedicated line within the main tube, O-2 could be delivered to the substrate surface which enables effective control of growth regime. Under optimized conditions (Ga-rich and near stoichiometric feed rate), step flow growth was obtained with X-ray rocking curve full-width at half maximum of 0.09 degrees and 0.20 degrees at a growth rate of 0.49 mu m/h and 3.42 mu m/h, respectively. On the other hand, oxygen-rich growth at high growth rates produced in-plane rotational domains. In addition, the alignment of single crystal (-201) beta-Ga2O3 with respect to the sapphire offcut direction was revealed such that [-20-1] beta-Ga2O3 is along [11-20] (offcut direction) sapphire. This study demonstrates the potential of the versatile COC-LPCVD system on the thin film growth of high quality beta-Ga2O3.
dc.identifier.doi10.1016/j.mssp.2022.106645
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85126990463
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2022.106645
dc.identifier.urihttps://hdl.handle.net/20.500.12418/29193
dc.identifier.volume146
dc.identifier.wosWOS:000791698100004
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleClose oxygen coupled low-pressure chemical vapor deposition growth of high quality ? - Ga2O3 on sapphire
dc.typeArticle

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