Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE

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dc.contributor.authorPertikel İzel
dc.contributor.authorDemir İlkay
dc.date.accessioned2024-03-05T10:47:50Z
dc.date.available2024-03-05T10:47:50Z
dc.date.issued15.01.2023tr
dc.departmentEğitim Bilimleri Enstitüsütr
dc.description.abstractIn this study, we report the effect of the combination of Si-doped and undoped inter-layer transition time in the strain compensated In 0.67 Ga 0.33 As/In 0.36 Al 0.64 As quantum cascade laser (QCL) structure grown on InP substrate by Metal Organic Vapor Phase Epitaxy (MOVPE). In situ reflectance spectroscopy and high resolution X-ray diffraction (HRXRD) technique have been used for the analysis of growth steps and crystalline quality of QCL structures, respectively. In addition, since thickness accuracy is very important for QCLs, two different thickness calculation methods have been used in the Global Fit simulation program for detailed thickness accuracy of structures. As a result, optimum values for thickness accuracy have been obtained as 5 and 10 s between undoped and Si-doped layers, respectively, as verified by the two methods.tr
dc.identifier.scopus2-s2.0-85139263903en_US
dc.identifier.scopusqualityN/A
dc.identifier.urihttps://hdl.handle.net/20.500.12418/14693
dc.identifier.wosWOS:000899608300003en_US
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.relation.publicationcategoryRaportr
dc.rightsinfo:eu-repo/semantics/openAccesstr
dc.subjectQCLtr
dc.subjectMOVPEtr
dc.subjectXRDtr
dc.subjectin-situ reflectancetr
dc.subjectthickness sensitivitytr
dc.titleEffect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPEen_US
dc.typeArticleen_US

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