Subband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thickness

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dc.authoridOZTURK, EMINE -- 0000-0003-2508-0863en_US
dc.contributor.authorOzturk, E.
dc.contributor.authorBahar, M. K.
dc.contributor.authorSokmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:15:30Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:15:30Z
dc.date.issued2008
dc.department[Ozturk, E. -- Bahar, M. K.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Sokmen, I.] Dokuzeylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.description.abstractFor a uniform distribution we have theoretically studied the subband structure of p-type delta-doped GaAs inserted into a quantum well at T = 0 K. We will investigate the influence of the delta-doping concentration and the layer thickness. The electronic properties such as the depth of con. ning potential, the density pro. le, the Fermi level, the subband energies and the subband populations have been calculated by solving the Schrodinger and Poisson equations self consistently. In this study, we have seen that the heavy-hole subbands contain many more energy states than the light-hole ones, the population of the heavy-hole levels represent approximately 91% of all the carriers.en_US
dc.identifier.doi10.1051/epjap:2008018en_US
dc.identifier.endpage200en_US
dc.identifier.issn1286-0042
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-42149108462en_US
dc.identifier.scopusqualityQ3
dc.identifier.startpage195en_US
dc.identifier.urihttps://dx.doi.org/10.1051/epjap:2008018
dc.identifier.urihttps://hdl.handle.net/20.500.12418/10418
dc.identifier.volume41en_US
dc.identifier.wosWOS:000254919000002en_US
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherCAMBRIDGE UNIV PRESSen_US
dc.relation.ispartofEUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICSen_US
dc.relation.publicationcategoryDiğeren_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleSubband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thicknessen_US
dc.typeReviewen_US

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