Characterization of gallium oxide/glass thin films grown by RF magnetron sputtering

In the present work, Gallium Oxide (Ga2O3) were deposited as thin films by radio frequency(RF) magnetron sputtering at 300 °C substrate temperature on glass substrate using Ga2O3target with 99.99% purity. The crystalline structure, morphology, optical properties of theGallium Oxide films were determined using X-ray diffraction (XRD), scanning electronmicroscopy (SEM) and UV–Visible Spectrometry, respectively. Experimental results showthat annealing has an important role in the changes observed in the characterization of theGallium Oxide thin films. All thin films produced were amorphous, except for the annealedP4-500. SEM pictures reveal the morphology of prepared Gallium Oxide thin films. Therefractive index and real part of complex dielectric constant increased as the film depositionpressure increased