Characterization of gallium oxide/glass thin films grown by RF magnetron sputtering

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dc.contributor.authorMobtakeri, Soheil
dc.contributor.authorTüzemen, Ebru Şenadım
dc.contributor.authorÖzer, Ali
dc.contributor.authorGür, Emre
dc.date.accessioned2024-10-26T17:34:08Z
dc.date.available2024-10-26T17:34:08Z
dc.date.issued2020
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractIn the present work, Gallium Oxide (Ga2O3) were deposited as thin films by radio frequency(RF) magnetron sputtering at 300 °C substrate temperature on glass substrate using Ga2O3target with 99.99% purity. The crystalline structure, morphology, optical properties of theGallium Oxide films were determined using X-ray diffraction (XRD), scanning electronmicroscopy (SEM) and UV–Visible Spectrometry, respectively. Experimental results showthat annealing has an important role in the changes observed in the characterization of theGallium Oxide thin films. All thin films produced were amorphous, except for the annealedP4-500. SEM pictures reveal the morphology of prepared Gallium Oxide thin films. Therefractive index and real part of complex dielectric constant increased as the film depositionpressure increased
dc.identifier.doi10.17776/csj.780730
dc.identifier.endpage937
dc.identifier.issn2587-2680
dc.identifier.issn2587-246X
dc.identifier.issue4
dc.identifier.startpage929
dc.identifier.trdizinid457053
dc.identifier.urihttps://doi.org/10.17776/csj.780730
dc.identifier.urihttps://search.trdizin.gov.tr/tr/yayin/detay/457053
dc.identifier.urihttps://hdl.handle.net/20.500.12418/23553
dc.identifier.volume41
dc.indekslendigikaynakTR-Dizin
dc.language.isoen
dc.relation.ispartofCumhuriyet Science Journal
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.titleCharacterization of gallium oxide/glass thin films grown by RF magnetron sputtering
dc.typeArticle

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