InGaAs-Based MSM Photodetector: Researching Absorption Layer, Barrier Layer, and Digital Graded Superlattice Layer with 3D Simulation

Basit Öğe Kaydı
dc.contributor.authorUnal, Dudu Hatice
dc.contributor.authorDemir, Ilkay
dc.date.accessioned2024-10-26T18:03:41Z
dc.date.available2024-10-26T18:03:41Z
dc.date.issued2023
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractThe effects of absorption, barrier, and digital graded layer thickness on dark current and photocurrent in Metal Semiconductor Metal (MSM) photodetectors by using 3D Silvaco TCAD are reported. The photo-dark current ratio (Iphoto/Idark) is calculated using the photocurrent and dark current values obtained by simulation. In study A (absorption layer thickness variation) the photocurrent, dark current and photo-dark current ratio are increased with increased absorption layer thickness, and the dark current is 1.138x10-7 A levels. In Study B (barrier layer thickness variation), when the barrier layer is added to the absorption layer, the dark current is decreased to 1.56x10-11 A levels. It is reported that the photo-dark current ratio with increasing barrier layer thickness increases. In study C (digital graded superlattice layer thickness variation), the dark current increases, and photocurrent decreases with the increase of the digital graded superlattice layer thickness. However, the photodark current ratio with increasing digital graded superlattice layer thickness decreases. Furthermore, a similar trend of development is observed on photo-dark current with adding of the barrier layer and digital graded superlattice layer on the absorption layer. These findings demonstrate the importance of optimizing layer thickness in MSM photodetectors for improved device performance.
dc.description.sponsorshipScientific Research Project Fund of Sivas Cumhuriyet University, Turkey [M-2022-843]
dc.description.sponsorshipThe authors acknowledge the usage of the Sivas Cumhuriyet University Nanophotonics Research and Application Center facilities. This work is supported by the Scientific Research Project Fund of Sivas Cumhuriyet University, Turkey under the project number M-2022-843.
dc.identifier.doi10.1016/j.rio.2023.100581
dc.identifier.issn2666-9501
dc.identifier.scopus2-s2.0-85178004989
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://doi.org/10.1016/j.rio.2023.100581
dc.identifier.urihttps://hdl.handle.net/20.500.12418/28494
dc.identifier.volume13
dc.identifier.wosWOS:001204705900001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofResults in Optics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectDark current
dc.subjectPhotocurrent
dc.subjectInGaAs
dc.subjectMetal -Semiconductor -Metal (MSM)
dc.subjectphotodetectors
dc.titleInGaAs-Based MSM Photodetector: Researching Absorption Layer, Barrier Layer, and Digital Graded Superlattice Layer with 3D Simulation
dc.typeArticle

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu