Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

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dc.authoridTiutiunnyk, Anton -- 0000-0003-1692-5561; Akimov, Volodymyr -- 0000-0001-9014-3539; Mora-Ramos, Miguel Eduardo -- 0000-0002-6232-9958en_US
dc.contributor.authorTiutiunnyk, A.
dc.contributor.authorAkimov, V.
dc.contributor.authorTulupenko, V.
dc.contributor.authorMora-Ramos, M. E.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorUngan, F.
dc.contributor.authorSokmen, I.
dc.contributor.authorMorales, A. L.
dc.contributor.authorDuque, C. A.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:45:53Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:45:53Z
dc.date.issued2016
dc.department[Tiutiunnyk, A. -- Akimov, V. -- Tulupenko, V. -- Morales, A. L. -- Duque, C. A.] Univ Antioquia UdeA, Fac Ciencias Exactas & Nat, Inst Fis, Grp Mat Condensada UdeA, Calle 70 52-21, Medellin, Colombia -- [Tiutiunnyk, A. -- Akimov, V. -- Tulupenko, V.] Donbass State Engn Acad, Dept Phys, Shkadinova 72, UA-84313 Kramatorsk, Ukraine -- [Mora-Ramos, M. E.] Univ Autonoma Estado Morelos, Inst Invest Ciencias Basicas & Aplicadas, Ctr Invest Ciencias, Ave Univ 1001, Cuernavaca 62209, Morelos, Mexico -- [Kasapoglu, E.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Sokmen, I.] Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkey -- [Akimov, V.] Univ Medellin, Carrera 87 30-65, Medellin, Colombia -- [Ungan, F.] Cumhuriyet Univ, Fac Technol, Deparment Opt Engn, TR-58140 Sivas, Turkeyen_US
dc.description.abstractElectronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.physb.2015.12.045en_US
dc.identifier.endpage108en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-84955175733en_US
dc.identifier.scopusqualityQ2
dc.identifier.startpage95en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.physb.2015.12.045
dc.identifier.urihttps://hdl.handle.net/20.500.12418/7420
dc.identifier.volume484en_US
dc.identifier.wosWOS:000373091900016en_US
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.ispartofPHYSICA B-CONDENSED MATTERen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectQuantum dotsen_US
dc.subjectNonlinear optical propertiesen_US
dc.subjectShallow impurityen_US
dc.subjectExcitonsen_US
dc.subjectElectric fielden_US
dc.titleElectronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity statesen_US
dc.typeArticleen_US

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