Real, imaginary and complex branches of Lamb waves in p-type piezoelectric semiconductor GaAs plate: Numerical and experimental investigation

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dc.contributor.authorDhib, Abderrahmen
dc.contributor.authorNjeh, Anouar
dc.contributor.authorOthmani, Cherif
dc.contributor.authorTakali, Farid
dc.contributor.authorBen Salah, Issam
dc.contributor.authorDemir, Ilkay
dc.contributor.authorZhang, Bo
dc.date.accessioned2024-10-26T18:09:38Z
dc.date.available2024-10-26T18:09:38Z
dc.date.issued2024
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractFirst, we experimentally measure the concentration of holes of the piezoelectric semiconductor (PSC) Gallium arsenide (GaAs) material based on the Hall effect measurement. We then numerically calculate the Lamb wave characteristics in a p-type PSC GaAs plate using this measured value of the concentration of holes (estimated at approximately p0 = 3.5431 x 1025m- 3). To guarantee the coupling effect that makes the Lamb wave a piezoactive wave, the GaAs crystal is oriented in a specific orientation of (110) plane. Ordinary differential equation (ODE) method is employed to calculate the dispersion curves, 3D view of the mechanical displacements, 3D view of the electric potential and 3D view of the concentrations of holes. Results show that the appearance of the complex branches of the Lamb modes coincides with the vanishing of the imaginary part of the wavevector (Im(k1)) to zero, which is a very remarkable finding that has not been discussed in previous studies. Meanwhile, these complex branches start exactly at the point of Zero-group-velocity (ZGV). Moreover, the present work highlights the hole drift characteristics of PSC GaAs and provides a critical comparative discussion with those published by (Zhu et al., 2018) for the PSC ZnO plate. Accordingly, the Screening effect phenomenon that is based on the positive holes in the negative electric potential region is discussed. The present results provide a theoretical and fundamental guidance on the development of smart devices based on the PSC GaAs material.
dc.description.sponsorshipNational Natural Science Foundation of China [12102131]; International Science and Technology Cooperation Project of Henan Province [242102521010]
dc.description.sponsorshipThis work was supported by the National Natural Science Foundation of China through grant Nos. 12102131 and the International Science and Technology Cooperation Project of Henan Province (242102521010) .
dc.identifier.doi10.1016/j.mssp.2024.108743
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85200234325
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2024.108743
dc.identifier.urihttps://hdl.handle.net/20.500.12418/30188
dc.identifier.volume183
dc.identifier.wosWOS:001289685900001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectPSC-GaAs material
dc.subjectConcentration of holes
dc.subjectLamb complex branches
dc.subjectScreening effect
dc.titleReal, imaginary and complex branches of Lamb waves in p-type piezoelectric semiconductor GaAs plate: Numerical and experimental investigation
dc.typeArticle

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