Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells

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dc.authoridAL, Emre Bahadir -- 0000-0003-4435-2879en_US
dc.contributor.authorAl, E. B.
dc.contributor.authorUngan, F.
dc.contributor.authorYesilgul, U.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorSari, H.
dc.contributor.authorSokmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:44:45Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:44:45Z
dc.date.issued2016
dc.department[Al, E. B. -- Kasapoglu, E.] Cumhuriyet Univ, Fac Sci, Dept Phys, TR-58140 Sivas, Turkey -- [Ungan, F. -- Yesilgul, U.] Cumhuriyet Univ, Fac Technol, Dept Opt Engn, TR-58140 Sivas, Turkey -- [Sokmen, I.] Dokuz Eylul Univ, Fac Sci, Dept Phys, TR-35160 Izmir, Turkey -- [Sari, H.] Cumhuriyet Univ, Fac Educ, Dept Primary Educ, TR-58140 Sivas, Turkeyen_US
dc.description.abstractThe effects of nitrogen and indium concentrations on the 1s, 2s, 2p(0) and 2p +/--like donor impurity energy states in a single Ga1-xInxNyAs1-y/GaAs quantum well (QW) are investigated by variational approach within the effective mass approximation. The results are presented as a function of the well width and the donor impurity position. It is found that the impurity binding and transition energies depend strongly on the indium concentration while depends weakly on the nitrogen concentration.en_US
dc.identifier.doi10.1142/S0217979216501393en_US
dc.identifier.issn0217-9792
dc.identifier.issn1793-6578
dc.identifier.issue22en_US
dc.identifier.scopus2-s2.0-84981287211en_US
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://dx.doi.org/10.1142/S0217979216501393
dc.identifier.urihttps://hdl.handle.net/20.500.12418/7163
dc.identifier.volume30en_US
dc.identifier.wosWOS:000383985700007en_US
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWORLD SCIENTIFIC PUBL CO PTE LTDen_US
dc.relation.ispartofINTERNATIONAL JOURNAL OF MODERN PHYSICS Ben_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectQuantum wellen_US
dc.subjectimpurity binding energyen_US
dc.subjectdilute III-N-V semiconductorsen_US
dc.subjecttransition energyen_US
dc.titleInfrared transitions between hydrogenic states in GaInNAs/GaAs quantum wellsen_US
dc.typeArticleen_US

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