Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

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dc.authoridGur, Emre/0000-0002-3606-2751
dc.contributor.authorDemir, Ilkay
dc.contributor.authorKasapoglu, Ahmet Emre
dc.contributor.authorBudak, Hasan Feyzi
dc.contributor.authorGur, Emre
dc.contributor.authorElagoz, Sezai
dc.date.accessioned2024-10-26T18:05:38Z
dc.date.available2024-10-26T18:05:38Z
dc.date.issued2020
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractWe investigate influence of GaAs buffer layer (BL) growth parameters such as temperature and thickness on the structural, morphological, crystalline and optical quality of metal organic vapor phase epitaxy (MOVPE) grown heterostructures of GaAs on Ge. It was found that the optimal BL conditions significantly decrease the effects of anti-phase boundaries (APBs) even when grown on offcut Ge substrate by two-step growth technique with AsH3 pre-flow to promote double atomic step formation. It is observed that as the growth temperature increases, the growth rate of the GaAs BL increases, too. Improvement on the structural quality is observed up to BLs temperature of 535 degrees C, then it decreases. On the other hand, as the different thick BLs, 12, 25, 75nm are considered, the epilayer grown on the 25nm thick BL has shown the lowest full width at half maximum (FWHM) value, large photoluminescence peak intensity and internal quantum efficiency (IQE).
dc.identifier.doi10.1051/epjap/2020190216
dc.identifier.issn1286-0042
dc.identifier.issn1286-0050
dc.identifier.issue2
dc.identifier.scopus2-s2.0-85087916686
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://doi.org/10.1051/epjap/2020190216
dc.identifier.urihttps://hdl.handle.net/20.500.12418/29106
dc.identifier.volume90
dc.identifier.wosWOS:000545961200001
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherEdp Sciences S A
dc.relation.ispartofEuropean Physical Journal-Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleInfluences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures
dc.typeArticle

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