Studies on the nonlinear optical properties of two-step GaAs/Ga1-xAlxAs quantum well

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dc.authoridMartinez-Orozco, J. C./0000-0001-8373-1535
dc.authoridUngan, Fatih/0000-0003-3533-4150
dc.contributor.authorMartinez-Orozco, J. C.
dc.contributor.authorUngan, F.
dc.contributor.authorRodriguez-Magdaleno, K. A.
dc.date.accessioned2024-10-26T18:05:29Z
dc.date.available2024-10-26T18:05:29Z
dc.date.issued2020
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractIn this paper, the numerical computation for the absorption coefficient and the relative refractive index change, considering the third order correction nonlinear optical properties, is reported. This study was performed for a symmetric two-step GaAs/Ga1-xAlxAs quantum well, subjected to a constant electric field applied along the growth direction z, and an in-plane constant magnetic field B. We also consider the intense laser field effect, characterized through the laser-dressing parameter alpha(0). The electronic structure computation was obtained by working under the effective mass approximation and the Schodinger equation was solved by diagonalization procedure. The optical properties are calculated by using the well-established compact density matrix formalism expressions for the nonlinear optical properties of interest. In general, we found that the structural parameters, as the step-like potential or the central barrier, permit the resonant peak and the amplitude design. We also found that the system becomes more sensitive to electric than to magnetic field, and finally that the intense, non-resonant, laser field can strongly change the optical properties of interest. Our results indicate that the implementation of the step-like potential profile, experimentally feasible, enhance the optical properties of interest, that falls within the THz electromagnetic range, and can be used to design a photodetector, or even can be used for quantum cascade lasers design.
dc.description.sponsorshipCONACyT-Mexico; CONACyT-SEP Mexico through the Fondo sectorial de investigacion para la educacion [A1-S-8842]
dc.description.sponsorshipK A Rodriguez-Magdaleno would like to acknowledges to CONACyT-Mexico for the financial support through its posdoctoral grant at the Universidad Autonoma de Zacatecas with project Estudio de propiedades optoelectronicas en pozos y puntos cuanticos AlGaAs/GaAs y otros materiales. J C Martinez-Orozco also would like to acknowledges to CONACyT-SEP Mexico for the partially financial support through the Fondo sectorial de investigacion para la educacion with project A1-S-8842 entitled Estudio de propiedades optoelectronicas basicas en pozos, puntos y anillos cuanticos de materiales III-V y II-VI y sus heteroestructuras.
dc.identifier.doi10.1088/1402-4896/ab4acd
dc.identifier.issn0031-8949
dc.identifier.issn1402-4896
dc.identifier.issue3
dc.identifier.scopus2-s2.0-85079887901
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1088/1402-4896/ab4acd
dc.identifier.urihttps://hdl.handle.net/20.500.12418/29026
dc.identifier.volume95
dc.identifier.wosWOS:000510894200001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofPhysica Scripta
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectabsorption coefficient
dc.subjectrelative refractive index change
dc.subjectintense laser field
dc.titleStudies on the nonlinear optical properties of two-step GaAs/Ga1-xAlxAs quantum well
dc.typeArticle

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