Effects of hydrostatic pressure, temperature, and position-dependent mass on the nonlinear optical properties of triple delta-doped GaAs quantum well

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dc.authoridUngan, Fatih/0000-0003-3533-4150
dc.contributor.authorTuzemen, A. Turker
dc.contributor.authorAl, E. B.
dc.contributor.authorSayrac, H.
dc.contributor.authorDakhlaoui, H.
dc.contributor.authorMora-Ramos, M. E.
dc.contributor.authorUngan, F.
dc.date.accessioned2024-10-26T18:07:28Z
dc.date.available2024-10-26T18:07:28Z
dc.date.issued2024
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractIn this study, we thoroughly investigate the impacts of hydrostatic pressure, temperature, and position-dependent mass (PDM) on the nonlinear optical properties of asymmetric triple delta-doped GaAs quantum wells. Our analysis covers total optical absorption coefficients, relative refractive index changes, nonlinear optical rectification, second harmonic generation, and third harmonic generation. Initially, we employ PDM to solve the time-independent Schr & ouml;dinger equation using the diagonalization method under effective mass and parabolic band approaches, considering pressure and temperature dependencies. Utilizing the first four energy eigenvalues and eigenfunctions, we apply the compact density matrix method to compute the system's nonlinear optical properties numerically. The results indicate a shift in optical property peak positions toward lower (higher) energy spectra with increasing hydrostatic pressure (temperature). Furthermore, the influence of PDM shifts the system's optical properties toward the higher energy spectrum, resembling the effect of temperature. From an experimental and theoretical perspective, one of the topics that researchers work on most is GaAs-based delta-doped systems (delta-doped heterojunction bipolar transistors, delta-doped field effect transistors, delta-multiple independent gate field effect transistors, etc.). We believe these findings will provide valuable insights for the researchers involved in GaAs-based delta-doped optoelectronic device design.
dc.description.sponsorshipSivas Cumhuriyet University
dc.description.sponsorshipThis research did not receive any specific grant from funding agencies in the public, commercial, or not-for-profit sectors.
dc.identifier.doi10.1140/epjp/s13360-024-05490-8
dc.identifier.issn2190-5444
dc.identifier.issue8
dc.identifier.scopus2-s2.0-85200450012
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1140/epjp/s13360-024-05490-8
dc.identifier.urihttps://hdl.handle.net/20.500.12418/29521
dc.identifier.volume139
dc.identifier.wosWOS:001284719900008
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer Heidelberg
dc.relation.ispartofEuropean Physical Journal Plus
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleEffects of hydrostatic pressure, temperature, and position-dependent mass on the nonlinear optical properties of triple delta-doped GaAs quantum well
dc.typeArticle

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